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ATmega128
Figure 137. Programming the Flash W aveforms
F
A
B
C
D
E
B
C
D
E
G
H
DATA
0x10
ADDR. LOW
DATA LOW
DATA HIGH
XX
ADDR. LOW DATA LOW
DATA HIGH
XX
ADDR. HIGH
XX
XA1
XA0
BS1
XTAL1
WR
RDY/BSY
RESET +12V
OE
PAGEL
BS2
Note:
“XX” is don’t care. The letters refer to the programming description above.
Programming the
EEPROM
The EEPROM is organized in pages, see Table 124 on page 291 . W hen programming the
EEPROM, the program data is latched into a page buffer. This allows one page of data to be
programmed simultaneously. The programming algorithm for the EEPROM data memory is as
follows (refer to “Programming the Flash” on page 293 for details on Command, Address and
Data loading):
1. A: Load Command “0001 0001”.
2. G: Load Address High Byte ($00 - $FF).
3. B: Load Address Low Byte ($00 - $FF).
4. C: Load Data ($00 - $FF).
5. E: Latch data (give PAGEL a positive pulse).
K: Repeat 3 through 5 until the entire buffer is filled.
L: Program EEPROM page:
1. Set BS1 to “0”.
2. Give W R a negative pulse. This starts programming of the EEPROM page. RDY/BSY
goes low.
3. W ait until to RDY/BSY goes high before programming the next page.
(See Figure 138 for signal waveforms.)
295
2467X–AVR–06/11
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